The OptiMOS™ TDM22545T dual-phase power module represents the industry’s first trans-inductance voltage regulator (TLVR) solution tailored for the demanding requirements of high-performance AI data ...

Taiwan has turned down the U.S. offer to move half of its semiconductor production to the U.S. Cheng Li-chiun, the Vice Premier and trade negotiator, said on Wednesday, after talks in Washington that ...

The survey reveals how emerging technologies, shifting applications, and evolving skills are shaping the future of the power electronics industry across AI, EVs, renewable energy, and beyond. The ...

Wolfspeed, Inc. has released its 200mm silicon carbide (SiC) materials products to the commercial sector. This shows that the switch from silicon to SiC technologies is making progress. At first, the ...

Tsuriel Avraham and his colleagues from Ariel University reviewed reliability challenges and models for SiC and GaN power devices. Silicon carbide and gallium nitride devices are seeing increased ...

Polaris’ innovation lies in merging the simplicity of linear regulators with a new class of optoelectronic energy recycling components. Polaris Semiconductor, a fabless semiconductor company ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

The evolution of batteries reflects technological progress and the ever-increasing demands of modern society. In this short list (see also an image in Figure 1), we examine the different steps that ...

To fully maximize the benefits of WBG tech, system redesign is essential. Wide-bandgap (WBG) semiconductors, namely silicon carbide and gallium nitride, have been an emerging frontier in power ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...

GaN power devices have gained prominence in medium- and high-power applications due to their ability to operate at high frequencies while maintaining excellent efficiency. Deliver higher efficiency, ...