This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has been the driving force behind the development of integrated circuits over the past 60 years; however, owing to ...
At the recent 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits, imec, in partnership with the lithography solution ...
Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...
Fig. 2: Quasi-stationary I–V characteristics of a floating-bulk n-channel 180-nm MOSFET showing neuro-synaptic capabilities. In the history of microelectronics, neural and synaptic behaviours based on ...
A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
IEEE Spectrum on MSN
Future transistor stacking plans start to diverge
IBM chooses a different path from Intel, Samsung, and TSMC ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
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