Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, ...

The research team led by Professor Daehyun Kim from the Department of Electronic Engineering at Kyungpook National University ...

A GaN HEMT incorporating the Korean company IVWorks' proprietary reGaN selective regrowth technology has become the world's ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

UK-based Dynex Semiconductor has announced the development of a new 450A, 650V GaN half-bridge power module, designed to ...

Why Navitas Semiconductor’s GaN solution is unique. Why GaN-based power supplies are smaller and more efficient. Gallium-nitride (GaN) transistors are able to handle large currents at high switching ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

I will break down Navitas Semiconductor and explain why this small but powerful chipmaker is attempting one of the boldest ...

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...