Flash memory is evolving fast. As demands for speed, scalability, and efficiency rise, the industry standard is shifting from ...

KIOXIA America, Inc. today announced that it has begun shipping evaluation samples(1) of embedded flash memory compatible with the next-generation UFS standard, UFS 5.0, which is currently being ...

UFS 5.0 flash storage will power net-gen smartphones and other mobile devices, and will deliver read/write performance of around 10.8 GB/s.

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400 picoseconds ...

Breaking the speed barrier of traditional flash memory, Intel and Micron Thursday announced a new flash memory architecture that increases the data transfer rates in consumer electronics by cutting ...

Shanghai-based researchers from Fudan University have achieved a breakthrough in semiconductor technology by developing a picosecond-level flash memory device. This device is said to boast an ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times faster than before In a world fixated on the race for superior artificial ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, has successfully developed a prototype of a large-capacity, high-bandwidth flash memory module essential for large-scale ...

In the world of flash memory, two primary types dominate the market: NOR flash and NAND flash. While they both serve as essential components in various electronic devices, they differ significantly in ...